M. Meneghini, Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications, IEEE Transactions on Power Electronics, vol.29, issue.5, pp.5-2199, 2014.
DOI : 10.1109/TPEL.2013.2271977

T. Mizutani, A study on current collapse in AlGaN/GaN HEMTs induced by bias stress, IEEE Transactions on Electron Devices, vol.50, issue.10, p.2015, 2003.
DOI : 10.1109/TED.2003.816549

R. Vetury, The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, vol.48, issue.3, p.560, 2001.
DOI : 10.1109/16.906451

Y. Chang, Effects of illumination on the excess carrier dynamics and variations of the surface states in an AlGaN/GaN heterostructure, Journal of Applied Physics, vol.107, issue.3, pp.33706-33707, 2010.
DOI : 10.1063/1.116177

Y. Huang, Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors, Applied Physics Letters, vol.12, issue.24, pp.243503-243504, 2010.
DOI : 10.1109/TED.2008.925242

H. Zaidi, « Highly sensitive UV detection mechanism in AlGaN, IEEE Transactions on Power Electronics, vol.60, p.9, 2013.

W. Shockley, « Research and investigation of inverse epitaxial UHF power transistors », Air Force Atomic Laboratory, 1964.