Magnetoresistive Random Access Memory

Abstract : A review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on Spin-Transfer-Torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.
Document type :
Journal articles
Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-01834195
Contributor : Antoine Chavent <>
Submitted on : Tuesday, July 10, 2018 - 12:05:06 PM
Last modification on : Thursday, April 4, 2019 - 9:44:02 AM
Long-term archiving on : Thursday, October 11, 2018 - 12:30:07 PM

File

Proc IEEE MRAM paper Apalkov-D...
Files produced by the author(s)

Identifiers

Collections

Citation

Dmytro Apalkov, Bernard Dieny, J. Slaughter. Magnetoresistive Random Access Memory. Proceedings of the IEEE, Institute of Electrical and Electronics Engineers, 2016, 104, pp.1796 - 1830. ⟨10.1109/JPROC.2016.2590142⟩. ⟨hal-01834195⟩

Share

Metrics

Record views

82

Files downloads

1890