Magnetoresistive Random Access Memory

Dmytro Apalkov (1) , Bernard Dieny (2) , J. M Slaughter (3)

1 Samsung Research America [San José]
2 SPINTEC - SPINtronique et TEchnologie des Composants
3 Everspin Technologies,

A review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on Spin-Transfer-Torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.

Mots clés: MRAM; spintronics; spin electronics; magnetic tunnel junctions; tunnel magnetoresistance; spin; transfer torque; STT-MRAM; toggle; thermally assisted MRAM

Domaines: Matière Condensée [cond-mat]

Dmytro Apalkov, Bernard Dieny, J. M Slaughter. Magnetoresistive Random Access Memory. Proceedings of the IEEE, 2016, 104, pp.1796 - 1830. ⟨10.1109/JPROC.2016.2590142⟩. ⟨hal-01834195⟩