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Article Dans Une Revue Applied Physics Letters Année : 2015

Zinc Oxide Sheet Field-Effect Transistors

Résumé

The present work investigates charge carrier transport in back-gated field-effect transistors based on ZnO sheets (BG ZS-FETs). The ZSs used in this work have been synthesized via the catalytic-assisted vapor-liquid-solid process inside a horizontal quartz tube furnace at around 950 °C. The BG ZS-FETs were constructed as bottom-gate top-contact structures using suspended and non-suspended ZS as the active channel material. Assessment of key device performance metrics revealed excellent n-channel behavior with low off-state current in the femtoamp range, high on-state current (∼2 μA/μm), high on-to-off current ratio (>107), a steep sub-threshold swing of around 190 mV/dec, and field-effect carrier mobility of around 60 cm2/Vs. Temperature dependent charge transport studies reveal excessive mobility degradation in the non-suspended device while the same parameter in the suspended case appeared fairly stable. The present work is envisaged to benefit ongoing research towards the development of high performance ZS-based thin-film transistors.
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Dates et versions

hal-01831015 , version 1 (05-07-2018)

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Abhishek Singh Dahiya, Charles Opoku, Christopher Oshman, Guylaine Poulin-Vittrant, Frédéric Cayrel, et al.. Zinc Oxide Sheet Field-Effect Transistors. Applied Physics Letters, 2015, 107 (3), pp.033105. ⟨10.1063/1.4927270⟩. ⟨hal-01831015⟩
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