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Article Dans Une Revue Vacuum Année : 2017

Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature

J. Laifi
  • Fonction : Auteur
N. Chaaben
  • Fonction : Auteur
A. Bchetnia
  • Fonction : Auteur
B. El Jani
  • Fonction : Auteur

Résumé

The inclusion of cubic phase in MOVPE-grown hexagonal GaN on GaAs substrate and its dependence with the growth temperature are investigated by high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and cathodoluminescence (CL). It is observed that the GaN layers surface exhibits 3D-grains structure. The density and shape of these grains are largely dependent on the growth temperature. HR-XRD study reveals the presence of cubic GaN clusters in the hexagonal GaN layer. Using CL we show that the cubic inclusions are not localized at the substrate/epilayer interface but propagate throughout the film.
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Dates et versions

hal-01830926 , version 1 (28-01-2022)

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Paternité - Pas d'utilisation commerciale

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J. Laifi, N. Chaaben, Y. El Gmili, Jean-Paul Salvestrini, A. Bchetnia, et al.. Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature. Vacuum, 2017, 138, pp.8-14. ⟨10.1016/j.vacuum.2017.01.007⟩. ⟨hal-01830926⟩
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