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Article Dans Une Revue Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Année : 2000

Hot hole transport through Au/n-Si(100) studied by reverse ballistic electron emission microscopy and spectroscopy

Résumé

The Au/n-Si(100) contact has been studied using reverse ballistic electron emission microscopy and spectroscopy. Two types of localized collector currents have been observed: one, positive corresponding to electron injection into Si, and the other, negative, associated with hole injection into the semiconductor. The comparative trial of BEEM and reverse BEEM images from the same area shows this difference to be linked to the interface structure. Effects of surface roughness on the observed contrasts are also discussed.

Dates et versions

hal-01830813 , version 1 (05-07-2018)

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A. Chahboun, Roland Coratger, Renaud Péchou, François Ajustron, J. Beauvillain. Hot hole transport through Au/n-Si(100) studied by reverse ballistic electron emission microscopy and spectroscopy. Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2000, 462 (1), pp.61-67. ⟨10.1016/S0039-6028(00)00537-9⟩. ⟨hal-01830813⟩
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