Hot hole transport through Au/n-Si(100) studied by reverse ballistic electron emission microscopy and spectroscopy
Résumé
The Au/n-Si(100) contact has been studied using reverse ballistic electron emission microscopy and spectroscopy. Two types of localized collector currents have been observed: one, positive corresponding to electron injection into Si, and the other, negative, associated with hole injection into the semiconductor. The comparative trial of BEEM and reverse BEEM images from the same area shows this difference to be linked to the interface structure. Effects of surface roughness on the observed contrasts are also discussed.
Mots clés
Crystal orientation
Electric currents
Electron emission
Electron transport properties
Emission spectroscopy
Gold
Scanning tunneling microscopy
Semiconducting silicon
Semiconductor metal boundaries
Surface roughness
Ballistic electron emission microscopy (BEEM)
Electron injection
Hole injection
Electric contacts