Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

V. V. Rumyantsev , D. V. Kozlov , S. V. Morozov , M. A. Fadeev , Aleksandr Kadykov (1) , Frederic Teppe (1) , V. S. Varavin , M. V. Yakushev , N. N. Mikhailov , S. A. Dvoretskii , V. I. Gavrilenko

1 L2C - Laboratoire Charles Coulomb

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Mots clés: Luttinger-Kohn model; annealing; double acceptors; HgCdTe; Fourier transform infrared spectroscopy

Domaines: Science des matériaux [cond-mat.mtrl-sci]

V. V. Rumyantsev, D. V. Kozlov, S. V. Morozov, M. A. Fadeev, Aleksandr Kadykov, et al.. Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates. Semiconductor Science and Technology, 2017, 32 (9), pp.095007. ⟨10.1088/1361-6641/aa76a0⟩. ⟨hal-01830522⟩