Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach

D. Querlioz (1) , J. Saint-Martin (1) , V.-N. Do (1) , A. Bournel (1) , P. Dollfus (1)

1 IEF - Institut d'électronique fondamentale

A new self-consistent quantum simulator based on the Monte Carlo solution of Wigner transport equation is used to analyze the operation of 6 nm-long DG-MOSFETs. By comparison with other simulation approaches, the work emphasizes the important role of scattering and quantum effects on the electrical characteristics of such nano-devices. The results are confronted to ITRS specifications and the various effects of aggressive oxide thickness thinning on device performance are discussed.

Domaines: Sciences de l'ingénieur [physics]

D. Querlioz, J. Saint-Martin, V.-N. Do, A. Bournel, P. Dollfus. Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach. 2006 International Electron Devices Meeting, Dec 2006, San Francisco, United States. ⟨10.1109/IEDM.2006.346939⟩. ⟨hal-01827054⟩