, Phys. Lett, vol.75, p.968, 1999.
,
, Appl. Phys. Lett, vol.86, p.91908, 2005.
,
, , p.1, 2007.
Silicon nanostructured layers for improvement of silicon solar cells' efficiency: A promising perspective, Materials Science and Engineering: C, vol.26, issue.2-3, p.427, 2006. ,
DOI : 10.1016/j.msec.2005.10.029
Effect of total pressure on the formation and size evolution of silicon quantum dots in silicon nitride films, Applied Physics Letters, vol.96, issue.18, p.183105, 2010. ,
DOI : 10.1103/PhysRevLett.86.1355
matrix, Physical Review B, vol.80, issue.12, p.125419, 2005. ,
DOI : 10.1088/0022-3727/36/19/L02
URL : https://hal.archives-ouvertes.fr/hal-01398821
Photoluminescence properties of partially phase separated silicon nitride films, Journal of Applied Physics, vol.1, issue.9, p.93512, 2011. ,
DOI : 10.1149/1.3236406
The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures, Journal of Crystal Growth, vol.310, issue.15, p.3680, 2008. ,
DOI : 10.1016/j.jcrysgro.2008.05.018
, Mater. Sci. Eng. B, vol.159, p.70, 2009.
Structural characterization of annealed Si1???xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrix, Journal of Applied Physics, vol.2007, issue.8, p.83544, 2008. ,
DOI : 10.1557/JMR.1992.2478
Band gap engineering of amorphous silicon quantum dots for light-emitting diodes, Applied Physics Letters, vol.78, issue.17, p.2575, 2001. ,
DOI : 10.1063/1.106652
Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach, Applied Physics Letters, vol.80, issue.4, p.661, 2002. ,
DOI : 10.1103/PhysRevLett.82.197
Third generation photovoltaics: Ultra-high conversion efficiency at low cost, Progress in Photovoltaics: Research and Applications, vol.133, issue.2, 2003. ,
DOI : 10.1103/PhysRev.133.A316
Structural and optoelectronical characterization of Si???SiO2/SiO2 multilayers with applications in all Si tandem solar cells, Journal of Applied Physics, vol.88, issue.6, p.64321, 2010. ,
DOI : 10.1063/1.2936308
URL : https://hal.archives-ouvertes.fr/hal-00469237
Silicon-rich SiO2/SiO2 multilayers: A promising material for the third generation of solar cell, Journal of Applied Physics, vol.106, issue.1, p.13501, 2009. ,
DOI : 10.1103/PhysRevLett.72.2101
URL : https://hal.archives-ouvertes.fr/hal-01624557
, Thin Solid Films, vol.419, issue.5, 2002.
Effects of boron doping on the structural and optical properties of silicon nanocrystals in a silicon dioxide matrix, Nanotechnology, vol.19, issue.42, p.424019, 2008. ,
DOI : 10.1088/0957-4484/19/42/424019
Physical characterization of n-GaAs on p-Si formed by low-temperature pulsed-laser deposition, Journal of Applied Physics, vol.31, issue.10, p.103111, 2009. ,
DOI : 10.1016/S0921-5107(99)00183-X
Photosensitive hetero-pairing of p-GaAs/n-Si by pulsed-laser deposition, Journal of Physics D: Applied Physics, vol.38, issue.22, p.4048, 2005. ,
DOI : 10.1088/0022-3727/38/22/007
X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition, Semiconductor Science and Technology, vol.19, issue.11, p.1322, 2004. ,
DOI : 10.1088/0268-1242/19/11/019
Tuning photoresponse through size distribution control of silicon quantum dots, Applied Surface Science, vol.257, issue.20, p.8409, 2011. ,
DOI : 10.1016/j.apsusc.2011.04.092
, 20th European Photovoltaic Solar Energy Conference, pp.6-10, 2005.
Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2, Nanoscale Research Letters, vol.6, issue.1, p.227, 2011. ,
DOI : 10.1186/1556-276X-6-227
Theoretical aspects of the luminescence of porous silicon, Physical Review B, vol.57, issue.15, p.11024, 1993. ,
DOI : 10.1103/PhysRevLett.57.249
Resonant tunneling through defects in an insulator: Modeling and solar cell applications, Journal of Applied Physics, vol.96, issue.9, p.5006, 2004. ,
DOI : 10.1063/1.117692
, J. Nanomater. Biostruct, vol.6, p.1073, 2011.
Resonant tunneling through defects in an insulator: Modeling and solar cell applications, Journal of Applied Physics, vol.96, issue.9, p.5006, 2004. ,
DOI : 10.1063/1.117692
, Physica, vol.34, issue.149, 1967.
Survey of Semiconductor Physics, van Nostrand Reinhold, pp.24324-24329, 1990. ,
,
, J. Appl. Phys, vol.112, p.24324, 2012.