Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector

N. Dyakonova (1) , D. Coquillat (1) , D. But , C. Consejo (1) , F. Teppe (1) , W. Knap (1) , L. Varani (2) , S. Blin (2, 3) , V. Nodjiadjim (4) , A. Konczykowska (4) , M. Riet (4)

1 L2C - Laboratoire Charles Coulomb
2 IES - Institut d’Electronique et des Systèmes
3 TéHO - Térahertz, hyperfréquence et optique
4 III-V Lab - Alcatel-Thalès III-V lab

—We present the low frequency noise and the photoresponse in InP double heterojunction bipolar transistor (DHBT) THz detectors. A current responsivity of 0.23 A/W and a noise equivalent power of 4·10-10 W/Hz 1/2 have been measured at 1 kHz modulation frequency. The collector bias can substantially reduce the noise equivalent power.

Mots clés: photocurrent; InP; detectors; THz; NEP; low frequency noise; DHBT

Domaines: Science des matériaux [cond-mat.mtrl-sci]

N. Dyakonova, D. Coquillat, D. But, C. Consejo, F. Teppe, et al.. Reducing noise equivalent power in InP DHBT terahertz detector by biasing the collector. 2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. ⟨10.1109/ICNF.2017.7986010⟩. ⟨hal-01818746⟩