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On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands

Abstract : This paper investigates on-wafer characterization of SiGe HBTs up to 500 GHz. Test structures for on-wafer thru-reflect-line (TRL) calibration have been designed and are presented. The TRL calibration method with silicon standards has first been benchmarked through electromagnetic simulation. Passive and active components are then characterized up to 500 GHz. The slight discontinuities between the frequency bands are explored. A specific focus was placed on incorrect horizontal probe positioning as well as on probe deformation, resulting in a better assessment of possible measurement errors.
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https://hal.archives-ouvertes.fr/hal-01818021
Contributor : Sebastien Fregonese <>
Submitted on : Wednesday, June 27, 2018 - 11:58:06 AM
Last modification on : Friday, November 13, 2020 - 11:10:07 AM
Long-term archiving on: : Thursday, September 27, 2018 - 3:37:24 AM

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Sebastien Fregonese, Magali de Matos, Marina Deng, Manuel Potéreau, Cédric Ayela, et al.. On-Wafer Characterization of Silicon Transistors Up To 500 GHz and Analysis of Measurement Discontinuities Between the Frequency Bands. IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2018, 66 (7), pp.3332-3341. ⟨10.1109/TMTT.2018.2832067⟩. ⟨hal-01818021⟩

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