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Chemical 3D tomography of 28 nm high K metal gate transistor: STEM XEDS experimental method and results

Abstract : A new STEM XEDS tomography technique is proposed thanks to the implementation of multi EDX SDD detectors in analytical TEMs. The technique flow is presented and the first results obtained on a 28 nm FDSOI transistor are detailed. The latter are compared with 2D XEDS analysis to demonstrate the interest of the slice extraction in all directions from a large analyzed volume without any 3D overlap effect issues. (C) 2013 Elsevier Ltd. All rights reserved.
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https://hal.archives-ouvertes.fr/hal-01814430
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Submitted on : Wednesday, June 13, 2018 - 11:45:45 AM
Last modification on : Wednesday, July 8, 2020 - 12:42:44 PM

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K. Lepinay, F. Lorut, R. Pantel, T. Epicier. Chemical 3D tomography of 28 nm high K metal gate transistor: STEM XEDS experimental method and results. Micron, Elsevier, 2013, 47, pp.43-49. ⟨10.1016/j.micron.2013.01.004⟩. ⟨hal-01814430⟩

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