Chemical 3D tomography of 28 nm high K metal gate transistor: STEM XEDS experimental method and results

K. Lepinay , F. Lorut (1) , R. Pantel (1) , T. Epicier (2)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 MATEIS - Matériaux, ingénierie et science [Villeurbanne]

A new STEM XEDS tomography technique is proposed thanks to the implementation of multi EDX SDD detectors in analytical TEMs. The technique flow is presented and the first results obtained on a 28 nm FDSOI transistor are detailed. The latter are compared with 2D XEDS analysis to demonstrate the interest of the slice extraction in all directions from a large analyzed volume without any 3D overlap effect issues. (C) 2013 Elsevier Ltd. All rights reserved.

Mots clés: Tomography; EDX; XEDS; STEM; 3D; Semiconductor; Transistor

Domaines: Matériaux

K. Lepinay, F. Lorut, R. Pantel, T. Epicier. Chemical 3D tomography of 28 nm high K metal gate transistor: STEM XEDS experimental method and results. Micron, 2013, 47, pp.43-49. ⟨10.1016/j.micron.2013.01.004⟩. ⟨hal-01814430⟩