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Article Dans Une Revue Applied Physics Letters Année : 2007

Morphological and structural evolutions of diluted Ge1−xMnx epitaxial films

Résumé

We investigate the structural and morphological evolutions of Ge1−xMnx films, grown by molecular beam epitaxy on Ge(100), as a function of Mn nominal concentration (x). We show that in our experimental growth conditions (growth temperature TG ∼ 160 °C), Mn atoms incorporated in the matrix increases with x up to a concentration m ∼ 0.03. Magnetic properties of the samples are mainly related to Ge3Mn5 cluster phase, while transport properties are connected to Ge:Mn matrix.

Dates et versions

hal-01811428 , version 1 (08-06-2018)

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J.P. Ayoub, Luc Favre, Isabelle Berbezier, A. Ronda, L. Morresi, et al.. Morphological and structural evolutions of diluted Ge1−xMnx epitaxial films. Applied Physics Letters, 2007, 91 (14), pp.141920--141920--3. ⟨10.1063/1.2794723⟩. ⟨hal-01811428⟩
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