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Article Dans Une Revue Applied Physics Letters Année : 2012

Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer

Résumé

Porous silicon (PSi) layers are used as templates to grow epitaxial planar and fully relaxed Ge pseudo-substrates. An annealing at 600 °C, dramatically changes the PSi morphology and produces compliant template layers which serve in a second step, as substrate for the epitaxy of fully relaxed SiGe layers with a Ge content between 50% and 94%. The SiGe pseudo-substrates produced by such process exhibit a remarkable planar surface resulting from the penetration of Ge inside the pores. They could be integrated into conventional microelectronic technology for the subsequent deposition of active layers such as tensily strained Si or relaxed Ge.
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Dates et versions

hal-01811415 , version 1 (08-06-2018)

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Mansour Aouassa, S. Escoubas, A. Ronda, Luc Favre, S. Gouder, et al.. Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer. Applied Physics Letters, 2012, 101 (23), pp.233105--233105--5. ⟨10.1063/1.4769040⟩. ⟨hal-01811415⟩
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