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Article Dans Une Revue Japanese Journal of Applied Physics Année : 2012

Recent Progresses in GaN Power Rectifier

Résumé

In this work, both “Schottky to Schottky” structure (STS) and pseudo-vertical Schottky barrier diode (pv-SBD) have been processed on GaN heteroepitaxially grown on sapphire or silicon by metal organic chemical vapor deposition (MOCVD) and characterized physically and electrically. Ni and Ti/Al were used to obtain respectively Schottky and Ohmic contacts using rapid thermal annealing (RTA). Adequate passivation steps and insertion of a resistive guard ring were also implemented in pv-SBD. The STS results, presented in this paper, evidence the impact of the substrate on the growth as well as all the progresses that have been done on GaN material quality. Furthermore, we demonstrate that high quality Schottky diodes can be obtained on GaN grown on sapphire by MOCVD. Indeed, ideality factors of 1.09 as well as a barrier height of 1.06 eV were obtained on pv-SBD devices that have a breakdown voltage over 600 V.
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Dates et versions

hal-01810909 , version 1 (08-06-2018)

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Daniel Alquier, Frédéric Cayrel, Olivier Ménard, Anne-Elisabeth Bazin, Arnaud Yvon, et al.. Recent Progresses in GaN Power Rectifier. Japanese Journal of Applied Physics, 2012, 51 (1S), pp.01AG08. ⟨10.1143/JJAP.51.01AG08⟩. ⟨hal-01810909⟩
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