Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface

M. El Kousseifi , K. Hoummada (1) , T. Epicier (2) , Dominique Mangelinck (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 MATEIS - Matériaux, ingénierie et science [Villeurbanne]

The first stages of NiSi phase formation at the expense of θ-Ni2Si and a Si substrate are investigated by transmission electron microscopy (TEM). These measurements show the presence of a low density of NiSi particles at the θ-Ni2Si/Si(1 0 0) interface and allow their complete shape to be determined. This stage corresponds to the lateral growth of NiSi at the epitaxial θ-Ni2Si/Si(1 0 0) interface. The shape of these particles is in agreement with the predicted models, and the shapes were fitted by an analytical expression derived from the model developed by Klinger et al. © 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Mots clés: High resolution transmission electron microscopy; Interfaces (materials); Models; Silicides; Silicon; Transmission electron microscopy; Analytical expressions; Direct observations; Lateral growth; Low density; Ni silicide; Phase formations; Predicted models; Si substrates; Nickel

Domaines: Matériaux

M. El Kousseifi, K. Hoummada, T. Epicier, Dominique Mangelinck. Direct observation of NiSi lateral growth at the epitaxial θ-Ni2Si/Si(1 0 0) interface. Acta Materialia, 2015, 99, pp.1-6. ⟨10.1016/j.actamat.2015.07.062⟩. ⟨hal-01804752⟩