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Communication Dans Un Congrès Année : 2015

Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

Résumé

Combining Resistive RAM concept with Vertical NAND technology and design, Vertical RRAM (VRRAM) was recently proposed as a cost-effective and extensible technology for future mass data storage applications [1]. 3D RRAM based neural networks were also proposed to emulate the potentiation and depression of a synapse [2], but more complex circuits were not discussed. In previous works [3-4], various RRAM based neuromorphic circuits were proposed and investigated, using planar devices.
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Dates et versions

hal-01804658 , version 1 (01-06-2018)

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Citer

G. Piccolboni, G. Molas, M. Portal, R. Coquand, Marc Bocquet, et al.. Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩. ⟨hal-01804658⟩
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