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Strained silicon photonics for Pockels effect based modulation

Abstract : We present on experimental results of straininduced Pockels effect in silicon based on Mach-Zehnder interferometer modulators. We theoretically studied both Pockels effect and carrier parasitic effect in silicon under an electric field. We demonstrated high speed Pockels-based optical modulation up to 25 GHz.
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https://hal.archives-ouvertes.fr/hal-01803049
Contributor : Mathias Berciano <>
Submitted on : Tuesday, March 2, 2021 - 9:04:46 PM
Last modification on : Monday, March 8, 2021 - 8:30:12 AM
Long-term archiving on: : Monday, May 31, 2021 - 8:03:21 PM

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Mathias Berciano, Pedro Damas, Guillaume Marcaud, Xavier Le Roux, Paul Crozat, et al.. Strained silicon photonics for Pockels effect based modulation. 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Aug 2017, Berlin, Germany. ⟨10.1109/GROUP4.2017.8082194⟩. ⟨hal-01803049⟩

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