Strained silicon photonics for Pockels effect based modulation

Mathias Berciano (1) , Pedro Damas (1) , Guillaume Marcaud (1) , Xavier Le Roux (1) , Paul Crozat (1) , Carlos Alonso Ramos (1) , Daniel Benedikovic (1) , Delphine Marris-Morini (1) , Eric Cassan (1) , Laurent Vivien (1)

1 C2N - Centre de Nanosciences et de Nanotechnologies [Orsay]

We present on experimental results of straininduced Pockels effect in silicon based on Mach-Zehnder interferometer modulators. We theoretically studied both Pockels effect and carrier parasitic effect in silicon under an electric field. We demonstrated high speed Pockels-based optical modulation up to 25 GHz.

Mots clés: Pockels effect; silicon photonics; silicon-oninsulator; strained silicon; Mach-Zehnder interferometer I

Domaines: Optique [physics.optics]

Mathias Berciano, Pedro Damas, Guillaume Marcaud, Xavier Le Roux, Paul Crozat, et al.. Strained silicon photonics for Pockels effect based modulation. 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Aug 2017, Berlin, Germany. ⟨10.1109/GROUP4.2017.8082194⟩. ⟨hal-01803049⟩