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Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon

Abstract : Light-induced defect generation seriously reduces the minority-carrier lifetime of crystalline silicon (c-Si) wafers which causes a decrease in solar cell efficiency. In this paper we investigate the impact of boron-oxygen complexes and iron impurities on the light induced minority-carrier lifetime degradation in c-Si, comparing electronic grade and upgraded metallurgical grade materials. For the latter, the characteristic of the decay process is shown to be composed of a fast initial decay and a subsequent slow asymptotic decay. We conclude that the dissociation of iron-boron pairs must be taken into account to explain the light-induced lifetime reduction.
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https://hal.archives-ouvertes.fr/hal-01802913
Contributor : Damien Barakel <>
Submitted on : Tuesday, May 29, 2018 - 10:17:59 PM
Last modification on : Tuesday, March 30, 2021 - 3:15:09 AM

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Bechir Dridi Rezgui, Virginie Mong-The Yen, Isabelle Perichaud, Damien Barakel, Marcel Pasquinelli, et al.. Behaviour of Light Induced Defect Generation and Carrier Lifetime Degradation in Solar Grade Silicon. DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, Unknown, Unknown Region. pp.141-144, ⟨10.4028/www.scientific.net/MSF.725.141⟩. ⟨hal-01802913⟩

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