InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications

Stefano Soresi (1) , Guénaëlle Hamon (2) , Alexandre Larrue (1) , José Alvarez (3) , P. Pires Mauricio (4) , Jean Decobert (1)

1 III-V Lab - Alcatel-Thalès III-V lab
2 Total S.A. Renewables
3 GeePs - Laboratoire Génie électrique et électronique de Paris
4 IF / UFRJ - Instituto de Física da Universidade Federal do Rio de Janeiro

Multijunction solar cells based on III–V compounds are one of the most effective possibilities to achieve high efficiencies for space and terrestrial applications. In this work, AlInAs:C/InP:S tunnel junctions are fabricated using MOVPE. Type‐II interface band alignment of AlInAs/InP heterostructure is ideal for increasing the photogenerated carriers tunneling. Furthermore, wide bandgaps ensure a high transmission of the incident light. The J–V characteristics of the final devices show very good results in terms of tunneling peak current density (1000 A cm−2) and specific resistance at low applied bias, making them compatible for photovoltaic applications.

Domaines: Energie électrique; Matériaux; Electronique; Micro et nanotechnologies/Microélectronique; Optique / photonique

Stefano Soresi, Guénaëlle Hamon, Alexandre Larrue, José Alvarez, P. Pires Mauricio, et al.. InP:S/AlInAs:C Tunnel Junction Grown by MOVPE for Photovoltaic Applications. physica status solidi (a), 2018, 215 (8), pp.1700427. ⟨10.1002/pssa.201700427⟩. ⟨hal-01797053⟩