Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions

Abstract : This paper describes an original design leading to the field effect passivation of Si n +-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al 2 O 3 /SiN x :H stacks on the top of implanted Si n +-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts.
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E Elmi, R Cristini-Robbe, M. Chen, B Wei, R. Bernard, et al.. Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions. Nanotechnology, Institute of Physics, 2018, 29 (28), 〈10.1088/1361-6528/aac032〉. 〈hal-01794379〉

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