Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions

Abstract : This paper describes an original design leading to the field effect passivation of Si n +-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by means of nanosphere lithography and thermal evaporation, were embedded in ultrathin-Al 2 O 3 /SiN x :H stacks on the top of implanted Si n +-p junctions, to achieve effective surface passivation. One way to characterize surface passivation is to use photocurrent, sensitive to recombination centers. We evidenced an improvement of photocurrent by a factor of 5 with the presence of Ag NPs. Finite-difference time-domain (FDTD) simulations combining with semi-quantitative calculations demonstrated that such gain was mainly due to the enhanced field effect passivation through the depleted region associated with the Ag-NPs/Si Schottky contacts.
Liste complète des métadonnées

Cited literature [16 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-01794379
Contributor : Julien Cardin <>
Submitted on : Friday, June 15, 2018 - 9:16:43 AM
Last modification on : Thursday, February 7, 2019 - 5:27:46 PM
Document(s) archivé(s) le : Monday, September 17, 2018 - 11:35:27 AM

File

Elmi_2018_Nanotechnology_HAL.p...
Files produced by the author(s)

Identifiers

Citation

E Elmi, R Cristini-Robbe, M. Chen, B Wei, R. Bernard, et al.. Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions. Nanotechnology, Institute of Physics, 2018, 29 (28), ⟨10.1088/1361-6528/aac032⟩. ⟨hal-01794379⟩

Share

Metrics

Record views

165

Files downloads

127