In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors

M. Alayan (1) , E. Vianello (1) , G. Navarro (1) , C. Carabasse (1) , S. La Barbera (1) , A. Verdy (1) , N. Castellani (1) , A. Levisse (1) , G. Molas (1) , L. Grenouillet (1) , T. Magis (1) , F. Aussenac (1) , M. Bernard (1) , B. Desalvo (1) , Jean-Michel Portal (2) , E. Nowak (1)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

This paper presents an HfO2 based resistive switching memory (RRAM) in series with a GeSe-based Ovonic Threshold Switching (OTS) selector. Detailed investigation of the main memory operations, forming, set, reset and read is presented for the first time to our knowledge. An innovative reading strategy is proposed. The selector switching is performed only if the RRAM cell is in the Low Resistive State (LRS), while the reading of the High Resistive State (HRS) is performed without switching the OTS selector, preventing disruptive reading when the RRAM cell is in HRS. Up to 106 read cycles have been demonstrated with a stable memory window of one decade and a stable OTS OFF state.

Domaines: Micro et nanotechnologies/Microélectronique

M. Alayan, E. Vianello, G. Navarro, C. Carabasse, S. La Barbera, et al.. In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors. 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268311⟩. ⟨hal-01791221⟩