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Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN HEMTs

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https://hal.archives-ouvertes.fr/hal-01787593
Contributor : Frédéric Darracq Connect in order to contact the contributor
Submitted on : Monday, May 7, 2018 - 4:29:00 PM
Last modification on : Tuesday, January 19, 2021 - 11:58:39 AM

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Mukherjee Kalparupa, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat. Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN HEMTs. 2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingham, United States. ⟨10.1109/IRPS.2018.8353581⟩. ⟨hal-01787593⟩

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