Atypical Effect of Displacement Damage on LM124 Bipolar Integrated Circuits

Thomas Borel (1, 2) , F. Roig (1, 2) , Alain Michez (1, 2) , B. Azais , S. Danzeca (1, 2) , N.J.-H. Roche (2) , F. Bezerra (3) , P. Calvel , L. Dusseau (1, 4, 2)

1 IES - Institut d’Electronique et des Systèmes
2 CSU - Centre Spatial Universitaire de Montpellier-Nîmes
3 CNES - Centre National d'Études Spatiales [Toulouse]
4 RADIAC - Radiations et composants

LM124 operational amplifiers from three different manufacturers are irradiated with 60Co gamma rays and neutrons. During neutrons irradiation, one of the three integrated circuits exhibits an unexpected slew rates increase while its open loop gain and supply bias current follow the usual monotonic decrease as described in the literature. Analysis at circuit level shows that this phenomenon is due to an increase in the radiation-induced base current of the transistor used as buffer stage in the amplification chain. It is then demonstrated that a slight modification of the buffer transistor design, which is not implemented on the two other devices, enhances this phenomenon. Finally, the impact of the buffer transistor design on displacement damage and total ionizing dose response is investigated.

Domaines: Instrumentations et Détecteurs [physics.ins-det]

Thomas Borel, F. Roig, Alain Michez, B. Azais, S. Danzeca, et al.. Atypical Effect of Displacement Damage on LM124 Bipolar Integrated Circuits. 54th Annual IEEE International Nuclear and Space Radiation Effects Conference, Jul 2017, New Orleans, United States. pp.71-77, ⟨10.1109/TNS.2017.2772901⟩. ⟨hal-01781910⟩