Electrical and thermal modeling and aging study of a C2M0025120D silicon carbide-based power MOSFET transistor

Abstract : In most papers studies about MOSFETs aging are treated from a materiel point of view, in this paper we consider the electrical aspects that contribute to such degradation. Two important degradation mechanisms are proposed related to the transistor bias and the increase of its temperature. This study consists to push the studied transistor to operate in an aging mode by imposing particular bias conditions and excessive junction temperature. Based on some electrical quantities, such as drain leakage current and on the junction temperature, the behavior of the transistor is deduced when operating in aging mode. The simulation results obtained show that during these particular operations, the junction temperature increases, which may destroy the transistor.
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Submitted on : Saturday, December 15, 2018 - 9:17:51 AM
Last modification on : Monday, March 25, 2019 - 12:02:07 AM
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E Baghaz, A Naamane, Nk M'Sirdi. Electrical and thermal modeling and aging study of a C2M0025120D silicon carbide-based power MOSFET transistor. International Conference on Electronic Engineering and Renewable Energy (ICEERE’2018), Apr 2018, Oujda, Morocco. ⟨hal-01779865⟩

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