Electro-thermal Model of a Silicon Carbide Power MOSFET

Abstract : This paper proposes an electro thermal model for power silicon carbide (SiC) MOSFET based on the EKV MOSFET structure. The thermal dissipation is modeled as an RC Network. The model is developed for the SiC MOSFET CMD CREE (V, A) and integrated in the Psim, Saber and Pspice simulation software libraries for prototyping. The simulation curves are compared with the manufacturers' data-sheet.
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Conference papers
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https://hal.archives-ouvertes.fr/hal-01779825
Contributor : Kouider Nacer M'Sirdi <>
Submitted on : Friday, April 27, 2018 - 8:41:28 AM
Last modification on : Wednesday, June 12, 2019 - 12:02:54 PM
Long-term archiving on : Tuesday, September 25, 2018 - 10:20:03 AM

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  • HAL Id : hal-01779825, version 1

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K Frifita, Nk M'Sirdi, A Baghaz, M Naamane, M Boussak. Electro-thermal Model of a Silicon Carbide Power MOSFET. International Conference on Electronic Engineering and Renewable Energy (ICEERE’2018), Apr 2018, Oujda, Morocco. ⟨hal-01779825⟩

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