Electro-thermal Model of a Silicon Carbide Power MOSFET

K Frifita (1) , Nk M'Sirdi (1, 2) , A Baghaz (1) , M Naamane (1, 2) , M Boussak (1, 3)

1 LIS - Laboratoire d'Informatique et des Systèmes (LIS) (Marseille, Toulon)
2 SASV - Systèmes Automatisés à Structure Variable
3 PECASE - Pronostic-Diagnostic Et CommAnde : Santé et Energie

This paper proposes an electro thermal model for power silicon carbide (SiC) MOSFET based on the EKV MOSFET structure. The thermal dissipation is modeled as an RC Network. The model is developed for the SiC MOSFET CMD CREE (V, A) and integrated in the Psim, Saber and Pspice simulation software libraries for prototyping. The simulation curves are compared with the manufacturers' data-sheet.

Mots clés: Electro-thermal Model; Psim; Saber; Pspice Model; SiC MOSFET

Domaines: Sciences de l'ingénieur [physics]

K Frifita, Nk M'Sirdi, A Baghaz, M Naamane, M Boussak. Electro-thermal Model of a Silicon Carbide Power MOSFET. International Conference on Electronic Engineering and Renewable Energy (ICEERE’2018), Apr 2018, Oujda, Morocco. ⟨hal-01779825⟩