State Space Models for Power SiC MOSFET

Abstract : This paper proposes a State Space Model for a power a Silicon Carbide (SiC) MOSFET. The model uses the electrical EKV MOSFET structure. The model is developed for the SiC MOSFET CMD CREE (V, A) and uses the parameters extracted from datasheet
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Conference papers
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https://hal.archives-ouvertes.fr/hal-01779823
Contributor : Kouider Nacer M'Sirdi <>
Submitted on : Friday, April 27, 2018 - 8:38:23 AM
Last modification on : Wednesday, June 12, 2019 - 12:01:55 PM

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  • HAL Id : hal-01779823, version 1

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Nk M'Sirdi, K Frifita, E Baghaz, A Naamane, M Boussak. State Space Models for Power SiC MOSFET. International Conference on Electronic Engineering and Renewable Energy (ICEERE’2018), Apr 2018, Oujda, Morocco. ⟨hal-01779823⟩

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