Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories

Marc Bocquet (1) , Damien Deleruyelle (1) , Christophe Muller (1) , Jean-Michel Portal (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

This letter deals with a self-consistent physical model for set/reset operations involved in unipolar resistive switching memories integrating a transition metal oxide. In this model, set operation is described in terms of a local electrochemical reduction of the oxide leading to the formation of metallic conductive filaments. Beside, reset operation relies on the thermally-assisted destruction of the formed metallic filaments by Joule heating effect. An excellent agreement is demonstrated with numerous published experimental data suggesting that this model can be confidently implemented into circuit simulators for design purpose. Memory devices based on resistive switching materials are currently pointed out as promising candidates to replace conventional non-volatile memory devices based on charge-storage beyond 2x nm-technological nodes. 1 In particular, devices integrating a transition metal oxide (so-called TMO) such as NiO, TiO 2 , ZnO or Cu x O, are of growing interest due to their simple Metal/Insulator/Metal (MIM) structure, oxides compatible with complementary metal-oxide-semiconductor technology and low process temperature. 2 So far, in TMO-based memory devices, the unipolar switching between low resistance state (LRS) and high resistance state (HRS) is explained in terms of creation/destruction of conductive filaments within the oxide. 3,4 Waser et al. 5 explained that set, i.e. the transition from HRS to LRS, originates from a local reduction reaction leading to the creation of metallic conductive filaments (CF). During reset, local dissipation of Joule power enhances the thermally activated diffusion of defects and/or of different atomic species constituting the CF combined with a local oxidation process. 6,7 Based on this phenomenological description , several models for reset were reported in Refs. 8–10 but very few offer a model for set. 11 Furthermore, it has to be stressed that there is currently no complete model taking into account both set and reset operations that could be easily implemented in circuit simulators for design purpose. In this context, this paper proposes a self-consistent physical model accounting for both set/reset operations in NiO-based unipolar resistive switching devices. After uncovering the theoretical background and the set of relevant physical parameters, the model is confronted to quasi-static and dynamic experimental data from literature. Fig.

Domaines: Micro et nanotechnologies/Microélectronique

Marc Bocquet, Damien Deleruyelle, Christophe Muller, Jean-Michel Portal. Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories. Applied Physics Letters, 2011, 98 (26), ⟨10.1063/1.3605591⟩. ⟨hal-01779321⟩