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Communication Dans Un Congrès Année : 2015

On the origin of dislocation loops in irradiated materials: a point of view from silicon

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hal-01767505 , version 1 (16-04-2018)

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  • HAL Id : hal-01767505 , version 1

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Alain Claverie. On the origin of dislocation loops in irradiated materials: a point of view from silicon. EMRS Conference: Symp. G. Nuclear Materials, May 2015, Lille, France. ⟨hal-01767505⟩
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