Structural analysis of the interface of silicon nanocrystals embedded in a Si3N4 matrix

Jérémy Barbé (1) , Kremena Makasheva (2) , S. Perraud (3) , Marzia Carrada (4) , Bernard Despax (1)

1 LAPLACE - LAboratoire PLasma et Conversion d'Energie
2 LAPLACE-MPP - Matériaux et Procédés Plasmas
3 CEA - Commissariat à l'énergie atomique et aux énergies alternatives
4 CEMES - Centre d'élaboration de matériaux et d'études structurales

The structure and interface states of thin nanocomposite layers containing Si nanocrystals embedded in an amorphous nitride matrix have been analyzed by Raman spectroscopy and x-ray photoelectron spectroscopy (XPS). The Si 2p core-level spectrum of the nanocomposite layer was deconvoluted by using five Gaussian-Lorentzian contributions corresponding to the different nitride states of Si. It was shown that the Si-ncs/Si3N4 interfaces formed during annealing are composed of a high density of Si2+ subnitrides. These subnitrides are more likely to be responsible for the shoulder at 494cm-1 on the Raman spectra. Considering the proportion of Si2+ subnitrides with respect to Si0 states, an abrupt transition from the crystalline to the amorphous phase due to Si 2=N-Si bridge bonds is suggested.

Mots clés: Interfaces (materials); Nanocomposites; Nitrides; Plasma enhanced chemical vapor deposition; Raman spectroscopy; Silicon; X ray photoelectron spectroscopy; Abrupt transition; Amorphous phase; Core-level spectra; Nano-composite layers; Nitride matrix; Pulsed Plasma Enhanced Chemical Vapor Deposition; Si nanocrystal; Silicon nanocrystals; Amorphous silicon

Domaines: Physique [physics]

Jérémy Barbé, Kremena Makasheva, S. Perraud, Marzia Carrada, Bernard Despax. Structural analysis of the interface of silicon nanocrystals embedded in a Si3N4 matrix. Journal of Physics D: Applied Physics, 2014, 47 (25), ⟨10.1088/0022-3727/47/25/255302⟩. ⟨hal-01763649⟩