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High-k MNOS-like stacked dielectrics for non-volatile memory application

Abstract : Charge-trapping memories such as SONOS and MONOS have attracted considerable attention as promising alternatives for next-generation flash memories due to dielectric layer's scalability, process simplicity, power economy, operation versatility. Nevertheless, the continued miniaturization of the devices forces an application of high-k dielectrics. In this work high-k stacked dielectric structures based on the combination of Hf-based and SiNx materials were fabricated. Their structural and electrical properties versus deposition conditions are studied by means of FTIR-ATR and high-resolution TEM techniques. All samples demonstrated smooth surface (roughness below 1 nm) and abrupt interfaces between the different stacked layers. No crystallization of Hf-based layers was observed after annealing at 800°C for 30 min, demonstrating their amorphous nature and phase stability upon annealing. Electrical characterization was carried out for all samples through capacitance-voltage (C-V) measurements of MIS capacitors. Uniform C-V characteristics were measured along the samples for all stacks. Besides, significant flat-band hysteresis due to charging of the stacks caused by carrier injection from the substrate was observed for the structures with pure HfO2 layers.
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https://hal.archives-ouvertes.fr/hal-01763538
Contributor : Céline Smith <>
Submitted on : Wednesday, April 11, 2018 - 11:05:18 AM
Last modification on : Friday, March 12, 2021 - 1:32:03 PM

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Larysa Khomenkova, Pascal Normand, Fabrice Gourbilleau, Abdelilah Slaoui, Caroline Bonafos. High-k MNOS-like stacked dielectrics for non-volatile memory application. Journal of Nano Research, 2016, 39, pp.121-133. ⟨10.4028/www.scientific.net/JNanoR.39.121⟩. ⟨hal-01763538⟩

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