Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates

Jean-Luc Autran (1) , Daniela Munteanu (1) , O Tintori (1) , S Harrison (1, 2) , E Decarre (1) , T Skotnicki (2)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 ST-CROLLES - STMicroelectronics [Crolles]

A quantum-mechanical (QM) full analytical model of the threshold voltage (V-T) for long-channel double-gate (DG) MOSFETs has been developed. This approach is based on analytical solutions for the decoupled Schrodinger and Poisson equations solved in the silicon region. Using this original model, a detailed quantitative comparison between symmetric (SDG) and asymmetric (ASG) architectures has been performed in terms of V-T dependence with film thickness and doping level.

Domaines: Micro et nanotechnologies/Microélectronique

Jean-Luc Autran, Daniela Munteanu, O Tintori, S Harrison, E Decarre, et al.. Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates. NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, Unknown, Unknown Region. pp.163-166. ⟨hal-01759462⟩