New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport

Sebastien Martinie (1, 2) , Daniela Munteanu (1) , Gilles Le Carval (2) , Jean-Luc Autran (1)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

This letter presents a new analytical model of the backscattering coefficient with a unique formulation from low- to high-field conditions and only depending on the form of scattering probabilities. The theoretical development is based on the flux theory and a new definition of scattering probabilities. In this model, the mean free path is given by Monte Carlo simulations. This new expression is further used to investigate the effect of high-field conditions in the quasi-ballistic drain current of the double-gate MOSFET.

Domaines: Micro et nanotechnologies/Microélectronique

Sebastien Martinie, Daniela Munteanu, Gilles Le Carval, Jean-Luc Autran. New Unified Analytical Model of Backscattering Coefficient From Low- to High-Field Conditions in Quasi-Ballistic Transport. IEEE Electron Device Letters, 2008, 29 (12), pp.1392-1394. ⟨10.1109/LED.2008.2007305⟩. ⟨hal-01759431⟩