Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Crystal Growth Année : 2017

Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

Résumé

The epitaxial growth, structural and optical properties of GaSb1-xBix layers are reported. The incorporation of Bi into GaSb is varied in the 0 < x <= 14% range by varying the growth temperature and V:III BEP ratio. The Bi content and the structural properties were determined by Rutherford backscattering and X-ray diffraction, respectively. The optical properties have been studied by photoluminescence (PL) spectroscopy. The surface morphology was observed by optical and atomic force microscopies. The samples show a smooth, droplet free surface up to 11.4% Bi incorporation. All samples exhibit room temperature PL up to a wavelength of 3.8 mu m achieved for 14% Bi incorporation. Finally, these alloys have shown a great thermal stability after several annealing at 450 degrees C. This work thus presents the highest Bi-content GaSbBi alloys and the first demonstration of room-temperature PL emission from GaSbBi alloys
Fichier non déposé

Dates et versions

hal-01755264 , version 1 (30-03-2018)

Identifiants

Citer

Olivier Delorme, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié. Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys. Journal of Crystal Growth, 2017, 477, pp.144-148. ⟨10.1016/j.jcrysgro.2017.03.048⟩. ⟨hal-01755264⟩
84 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More