On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study

Michael Niehle , Jean-Baptiste Rodriguez (1, 2) , Laurent Cerutti (1, 2) , Eric Tournié (1, 2) , Achim Trampert (3)

1 IES - Institut d’Electronique et des Systèmes
2 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
3 PDI - Paul-Drude-Institut für Festkörperelektronik

Domaines: Physique [physics]; Sciences de l'ingénieur [physics]; Matériaux

Michael Niehle, Jean-Baptiste Rodriguez, Laurent Cerutti, Eric Tournié, Achim Trampert. On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study. Acta Materialia, 2018, 143, pp.121 - 129. ⟨10.1016/j.actamat.2017.09.055⟩. ⟨hal-01754869⟩