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ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology

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https://hal.archives-ouvertes.fr/hal-01745666
Contributor : Mathieu Moreau <>
Submitted on : Wednesday, March 28, 2018 - 2:26:41 PM
Last modification on : Tuesday, March 30, 2021 - 3:22:43 AM

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Hassen Aziza, P. Canet, J. Postel-Pellerin, Mathieu Moreau, Jean-Michel Portal, et al.. ReRAM ON/OFF resistance ratio degradation due to line resistance combined with device variability in 28nm FDSOI technology. 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. ⟨10.1109/ULIS.2017.7962594⟩. ⟨hal-01745666⟩

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