On the electrical variability of resistive-switching memory devices based on NiO oxide

S Tirano (1, 2) , Marc Bocquet (1) , Christophe Muller (1) , D. Deleruyelle (1) , L. Perniola (2) , V. Jousseaume (2) , B. de Salvo (2) , G. Reimbold (2)

1 IM2NP - Institut des Matériaux, de Microélectronique et des Nanosciences de Provence
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Resistive-switching memories (so-called RRAM) are increasingly investigated since they gather low cost, high integration capabilities together with good performances [1]. RRAM memories based on transition metal oxide are promising candidate because of a simple metal/oxide/metal stack allowing the integration of memory elements into the back end of line [2]. Before substituting conventional Flash memories, RRAM devices must fulfill reliability requirements and the variability of their electrical characteristics has to be properly apprehended. In this paper the variability on forming and reset characteristics are reproduced by 1D modeling. By using this approach, this paper aims at identifying the key physical parameters that may explain the intrinsic spread of electrical characteristics.

Domaines: Micro et nanotechnologies/Microélectronique

S Tirano, Marc Bocquet, Christophe Muller, D. Deleruyelle, L. Perniola, et al.. On the electrical variability of resistive-switching memory devices based on NiO oxide. 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC), Dec 2011, Arlington, United States. ⟨hal-01745633⟩