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Article Dans Une Revue Applied Physics Letters Année : 2006

White electroluminescence from C- and Si-rich thin silicon oxides

Résumé

White electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40nm thick SiO2, followed by annealing at 1100°C. Structural and optical studies allow assigning the electroluminescence to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10−4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25V, corresponding to the onset of electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers.
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hal-01745047 , version 1 (16-04-2018)

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O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, A. Perez-Rodriguez, et al.. White electroluminescence from C- and Si-rich thin silicon oxides. Applied Physics Letters, 2006, 89 (25), pp.253124 - 253124. ⟨10.1063/1.2423244⟩. ⟨hal-01745047⟩
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