ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices

Karolina Galicka-Fau (1) , Michel Andrieux (2) , Corinne Legros (1) , Michaële Herbst-Ghysel (1) , Isabelle Gallet (2) , Magali Brunet (3) , Emmanuel Scheid (3) , Sylvie Schamm-Chardon (4)

1 UP11 - Université Paris-Sud - Paris 11
2 LEMHE - Laboratoire d'étude des matériaux hors équilibre
3 LAAS - Laboratoire d'analyse et d'architecture des systèmes
4 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

Zirconia films are already used as thermal barrier, sensors and fuel cells and have great potential for electronic applications in particular as a dielectric in high density filter capacitors in future micro DC-DC converters. In this context, the SiO2/Si3N4 standard dielectric was replaced by ZrO2 (ε = 25-40) in 2D and 3D MIS (Metal-Isolator-Semiconductor) structures. Zirconia thin layers (100nm) were deposited between 550{degree sign}C and 700{degree sign}C on Si(100) planar substrates and inside pores etched in Si(100) by direct liquid injection MOCVD from Zr2(OiPr)6(thd)2 precursor and annealed at 900{degree sign}C to check phase stability. As-deposited films exhibit a cubic/tetragonal structure that was identified by DRX and FT-IR. The electric properties on specific samples were measured and discussed. After annealing, phase transformation occurs in the film, from cubic/tetragonal structure to a tetragonal/monoclinic one, depending on the deposition parameters.

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

Karolina Galicka-Fau, Michel Andrieux, Corinne Legros, Michaële Herbst-Ghysel, Isabelle Gallet, et al.. ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices. ECS Transactions, 2009, 25 (8), pp.1121-1128. ⟨10.1149/1.3207715⟩. ⟨hal-01745028⟩