Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2010

Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks

Résumé

Er−doped HfO2 (Er∼15%) films are grown by atomic layer deposition on Si(100). The characteristics of the doped oxide are compared with those of HfO2. In Er−doped HfO2, the stabilization of the cubic structure, together with the effect of the high polarizability of Er3+, allow to obtain a dielectric constant of ∼33 after annealing at 900 °C. The insertion of Er within the metallic sublattice of HfO2 reduces the net density of fixed charges, due to the creation of oxygen vacancies. For similar equivalent oxide thickness, lower leakage currents are measured for Er−doped HfO2 than for HfO2.
Fichier principal
Vignette du fichier
1.3400213.pdf (586.4 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-01745025 , version 1 (09-04-2018)

Identifiants

Citer

C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, Sylvie Schamm-Chardon, et al.. Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks. Applied Physics Letters, 2010, 96 (18), pp.182901. ⟨10.1063/1.3400213⟩. ⟨hal-01745025⟩
45 Consultations
192 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More