Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

Anna Maria Beltrán (1) , Sylvie Schamm-Chardon (1) , Vincent Mortet (2) , Matthieu Lefebvre (2) , Eléna Bedel-Pereira (2) , Fuccio Cristiano (2) , Christian Strenger (3) , Volker Haeublein (3) , Anton J. Bauer (3)

1 CEMES - Centre d'élaboration de matériaux et d'études structurales
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 Fraunhofer IISB - Fraunhofer Institute for Integrated Systems and Device Technology

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2 interface are considered in relation with the measured low electron mobility of the MOSFETS.

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]

Anna Maria Beltrán, Sylvie Schamm-Chardon, Vincent Mortet, Matthieu Lefebvre, Eléna Bedel-Pereira, et al.. Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs. Materials Science Forum, 2012, 711, pp.134-138. ⟨10.4028/www.scientific.net/MSF.711.134⟩. ⟨hal-01745014⟩