Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 ?m range

N.D. Zakharov , P. Werner , U. Gösele , N.N. Ledentsov , D. Bimberg , Nikolay Cherkashin (1) , N.A. Bert , B.V. Volovik , V.M. Ustinov (2) , N.A. Maleev , A.E. Zhukov , A.F. Tsatsul'Nikov

1 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
2 A.F. Ioffe Physical-Technical Institute

Domaines: Physique [physics]

N.D. Zakharov, P. Werner, U. Gösele, N.N. Ledentsov, D. Bimberg, et al.. Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 ?m range. Materials Research Society Symposium - Proceedings, 2001, 672, pp.O8.5.1-O8.5.6. ⟨hal-01736124⟩