Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures

A.A. Tonkikh , V.A. Egorov , N.K. Polyakov , G.?. Tsyrlin , B.V. Volovik , Nikolay Cherkashin (1, 2) , V.M. Ustinov (2)

1 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
2 A.F. Ioffe Physical-Technical Institute

The optical and structural properties of heterostructures with quantum dots (QDs) in the InAs/GaAs system overgrown with an InGaAs solid solution were studied. The QD layers were obtained using different molecular beam deposition techniques: molecular beam epitaxy versus submonolayer migration-stimulated epitaxy. The photoluminescence peaks in the spectra of samples with overgrown QD layers occur in the wavelength range from 1.18 to 1.32 μm. It was found that the growth conditions also influence the electronic structure of QDs.

Domaines: Physique [physics]

A.A. Tonkikh, V.A. Egorov, N.K. Polyakov, G.?. Tsyrlin, B.V. Volovik, et al.. Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures. Technical Physics Letters, 2002, 28 (3), pp.191-193. ⟨10.1134/1.1467272⟩. ⟨hal-01736119⟩