Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

A. Wellner (1) , Vincent Paillard (1) , H. Coffin (2) , Nikolay Cherkashin (3) , Caroline Bonafos (2)

1 Laboratoire Physique des Solides de Toulouse
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

We report Raman spectra of a single layer of silicon nanoparticles, spatially ordered in SiO2 at a tunneling distance from a silicon substrate. This is achieved by exploiting effects which enhance the nanocrystal signal, while suppressing the substrate one. The method is applied to investigate the structure of ion-implantation-produced Si nanoparticles annealed under different conditions. The results, which are in good agreement with transmission electron microscopy data, are used to explain photoluminescence measurements.

Domaines: Physique [physics]

A. Wellner, Vincent Paillard, H. Coffin, Nikolay Cherkashin, Caroline Bonafos. Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate. Journal of Applied Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩. ⟨hal-01736095⟩