Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H

P. Nguyen (1) , K.K. Bourdelle (1) , C. Aulnette (1) , F. Lallement (1) , N. Daix (1) , N. Daval (1) , I. Cayrefourcq (1) , F. Letertre (1) , C. Mazuré (1) , Y. Bogumilowicz (2) , A. Tauzin (2) , C. Deguet (2) , Nikolay Cherkashin (3) , Alain Claverie (3)

1 Silicon-on-Insulator Technologies (SOITEC)
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

We have performed systematic measurements of the splitting kinetics induced by H-only and He + H sequential ion implantation into relaxed Si$_{0.8}$Ge$_{0.2}$ layers and compared them with the data obtained in Si. For H-only implants, Si splits faster than Si$_{0.8}$Ge$_{0.2}$ Sequential ion implantation leads to faster splitting kinetics than H-only in both materials and is faster in Si$_{0.8}$Ge$_{0.2}$ than in Si. We have performed secondary ion mass spectrometry, Rutherford backscattering spectroscopy in channeling mode, and transmission electron microscopy analyses to elucidate the physical mechanisms involved in these splitting phenomena. The data are discussed in the framework of a simple phenomenological model in which vacancies play an important role.

Domaines: Physique [physics]

P. Nguyen, K.K. Bourdelle, C. Aulnette, F. Lallement, N. Daix, et al.. Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H . Journal of Applied Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩. ⟨hal-01736059⟩