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Communication Dans Un Congrès Année : 2011

Determination of strain within Si1-yCy layers grown by CVD on a Si substrate

Résumé

In this work, we performed quantitative measurements of strain in structures consisting of a 30 nm-thick Si1-yCy layer grown by chemical vapour deposition (CVD) on a Si (001) substrate at 550 or 600°C. The total C concentration varies from 0.67 to 1.97% that was measured by SIMS. Geometric phase analysis (GPA) of high resolution transmission electron microscopy (HR TEM) cross-section images and convergent beam electron diffraction (CBED) were used to deduce the strain within these Si1-yCy layers. Finite-element simulations were carried out to estimate the impact of strain relaxation in thin areas of a specimen. These results were compared with the data obtained by high resolution X-ray diffraction and Raman spectroscopy and with the predictions of elasticity theory. Particular interest is paid to the formation of the structural defects within Si1-yCy layers as a function of a C concentration, growth temperature and incorporated strain. Both cross-sectional and plan-view TEM specimen configurations were used to obtain quantitative information on the defect size distribution, their density and structure.
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Dates et versions

hal-01736057 , version 1 (16-03-2018)

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Nikolay Cherkashin, A. Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch, et al.. Determination of strain within Si1-yCy layers grown by CVD on a Si substrate. Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩. ⟨hal-01736057⟩
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