Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs

A.F. Tsatsulnikov (1) , W.V. Lundin , A.V. Sakharov (1) , E.E. Zavarin (1) , S.O. Usov (1) , A.E. Nikolaev , N.V. Kryzhanovskaya , A.E. Chernyakov , A.L. Zakgeim , Nikolay Cherkashin (2) , Martin Hÿtch (3)

1 RAS - Russian Academy of Sciences [Moscow]
2 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
3 CEMES - Centre d'élaboration de matériaux et d'études structurales

This work presents the results of the investigation of approaches to the synthesis of the active region of LED with extended optical range. Combination of short‐period InGaN/GaN superlattice and InGaN quantum well was applied to extend optical range of emission up to 560 nm. Monolithic white LED structures containing two blue and one green QWs separated by the short‐period InGaN/GaN superlattice were grown with external quantum efficiency up to 5–6%.

Domaines: Physique [physics]

A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, et al.. Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs. PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩. ⟨hal-01736043⟩