Optoelectronic structures with InAlN layers grown by MOVPE

A.V. Sakharov (1) , W.V. Lundin (1) , E.E. Zavarin (1) , M.A. Sinitsyn (1) , S.O. Usov (1) , A.E. Nikolaev (1) , S.I. Troshkov (1) , M.A. Yagovkina (1) , D.V. Davydov (1) , Nikolay Cherkashin (2) , Martin Hÿtch (3) , Florian Hüe (3) , P.N. Brunkov (1) , A.F. Tsatsulnikov (1)

1 A.F. Ioffe Physical-Technical Institute
2 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
3 CEMES - Centre d'élaboration de matériaux et d'études structurales

The results of the some practical applications of InAlN layers in a device hetrostructures grown by MOVPE is presented. It is shown that use of InAlN allows not only create high-quality DBRs and HEMT structures, but also effectively modify properties of InAlN/GaN/InGaN light-emitting devices.

Mots clés: Nitrides; DBR; HEMT; MOVPE

Domaines: Science des matériaux [cond-mat.mtrl-sci]

A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, S.O. Usov, et al.. Optoelectronic structures with InAlN layers grown by MOVPE. 30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩. ⟨hal-01736041⟩