Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2012

Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

Résumé

Using transmission electron microscopy techniques, we identify the extended defects of interstitial and vacancy types found after H implantation and annealing in GaN. We statistically analyze the effect of boarding or sandwiching GaN between strained superlattices on these populations of defects. We finally demonstrate the possibility to use compressively strained layers to localize and favour the precipitation of vacancy type defects in GaN. The source of excess vacancies, the mechanism responsible for the cavity localization, and the drastic increase of their volume fraction are discussed.
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hal-01736033 , version 1 (22-03-2018)

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Nikolay Cherkashin, Alain Claverie, D. Sotta, J.-M. Bethoux, L. Capello, et al.. Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices. Applied Physics Letters, 2012, 101 (2), pp.023105. ⟨10.1063/1.4733619⟩. ⟨hal-01736033⟩
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