Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2013

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Résumé

Non-truncated pyramidal In(Ga)As quantum dots (QDs) embedded in GaAs were obtained by a combination of low temperature/high rate GaAs covering of InAs QDs. We use advanced transmission electron microscopy to study the composition and mechanics of the objects. Results from the core region of a sliced QD, and from an entire object, are consistent and complementary allowing the development of accurate models describing the 3D shape, chemical distribution, elastic strains and stresses in the QD, wetting layer, and matrix. The measured structure develops an extremely compressive apex, reaching a vertical stress of −8 GPa and horizontal stress of −6.2 GPa.
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hal-01736028 , version 1 (22-03-2018)

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Nikolay Cherkashin, Shay Reboh, Martin Hÿtch, Alain Claverie, V.V. Preobrazhenskii, et al.. Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy. Applied Physics Letters, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩. ⟨hal-01736028⟩
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