C. Aitken and J. F. Harrod, Alkyl dichloroacetates: a novel application in the preparation of highly functionalised aziridines from imines, J. Organomet. Chem, vol.280, pp.11-13, 1985.

L. Aloui, T. Duguet, F. Haidara, M. Record, D. Samélor et al., Al-Cu intermetallic coatings processed by sequential metalorganic chemical vapor deposition and post deposition annealing, Appl. Surf. Sci, vol.258, pp.73-80, 2012.

T. Amazawa, T. Yamamoto, and Y. Arita, Planarized multilevel interconnection using chemical mechanical polishing of selective CVD-Al via plugs, IEEE Trans. Electron Dev, vol.45, pp.815-820, 1998.

, Ansys/Fluent v12.1sp1. Documentation, 2009.

M. Armbrüster, K. Konvir, M. Friedrich, D. Teschner, G. Wowsnick et al., Al 13 Fe 4 as a low-cost alternative for palladium in heterogeneous hydrogenation, Nat. Mater, vol.11, pp.690-693, 2012.

I. G. Aviziotis, Chemical Vapor Deposition of Al, Fe and of the Al13Fe4 Approximant Intermetallic Phase: Experiments and Multiscale Simulations, 2016.

I. G. Aviziotis, T. Duguet, K. Soussi, G. Kokkoris, N. Cheimarios et al., Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations, Phys. Status Solidi C, vol.12, pp.923-930, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01721498

I. G. Aviziotis, N. Cheimarios, T. Duguet, C. Vahlas, and A. G. Boudouvis, Multiscale modeling and experimental analysis of chemical vapor deposited aluminum films: linking reactor operating conditions with roughness evolution, Chem. Eng. Sci, vol.155, pp.449-458, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01412001

I. G. Aviziotis, T. Duguet, C. Vahlas, and A. G. Boudouvis, Combined macro-/nanoscale investigation of the CVD of Fe from Fe(CO) 5, Adv. Mater. Interf, vol.1601185, pp.1-10, 2017.

S. Chaudhuri, S. Rangan, J. Veyan, J. T. Muckerman, and Y. J. Chabal, Formation and bonding of alane clusters on Al(111) surfaces studied by infrared absorption spectroscopy and theoretical modeling, J. Am. Chem. Soc, vol.130, pp.10576-10587, 2008.

N. Cheimarios, G. Kokkoris, and A. G. Boudouvis, Multiscale modeling in chemical vapor deposition processes: coupling reactor scale with feature scale computations, Chem. Eng. Sci, vol.65, pp.5018-5028, 2010.

K. L. Choy, Chemical vapour deposition of coatings, Prog. Mater. Sci, vol.48, pp.57-170, 2003.

W. M. Deen, Analysis of transport phenomena, 1998.

M. Delmas, D. Poquillon, Y. Kihn, and C. Vahlas, Al-Pt MOCVD coatings for the protection of Ti6242 alloy against oxidation at elevated temperature, Surf. Coat. Technol, vol.200, pp.1413-1417, 2005.
URL : https://hal.archives-ouvertes.fr/hal-00474908

D. M. Frigo, G. J. Van-eijden, P. J. Reuvers, and C. J. Smit, Preparation and properties of alane dimethylethylamine, a liquid precursor for MOCVD, Chem. Mater, vol.6, pp.190-195, 1994.

M. H. Hamasha, K. Alzoubi, I. Switzer, J. C. Lu, S. Desu et al., A study on crack propagation and electrical resistance change of sputtered aluminium thin film on poly ethylene terephthalate substrate under stretching, Thin Solid Films, vol.519, pp.7918-7924, 2011.

J. S. Han, K. F. Jensen, Y. Senzaki, and W. L. Gladfelter, Pyrolytic laser assisted chemical vapor deposition of Al from dimethylethylamine-alane: Characterization and a new two-step writing process, Appl. Phys. Lett, vol.64, pp.425-427, 1994.

S. D. Hersee and J. M. Ballingal, The operation of metalorganic bubblers at reduced pressure, J. Vac. Sci. Technol. A, vol.8, pp.800-804, 1990.

T. W. Jang, W. Moon, J. T. Baek, and B. T. Ahn, Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source, Thin Solid Films, vol.333, pp.137-141, 1998.

H. Kawamura, V. Kumar, Q. Sun, and Y. Kawazoe, Cyclic and linear polymeric structures of Al n H 3n (n=3-7) molecules, Phys. Rev. A, vol.67, issue.063205, pp.1-8, 2003.

B. Kim, X. Li, and S. Rhee, Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane, Appl. Phys. Lett, vol.68, pp.3567-3569, 1996.

C. R. Kleijn, Computational modeling of transport phenomena and detailed chemistry in chemical vapor deposition -a benchmark solution, Thin Solid Films, vol.365, pp.294-306, 2000.

C. R. Kleijn, R. Dorsman, K. J. Kuijlaars, M. Okkerse, and H. Van-santen, Multiscale modeling of chemical vapor deposition processes for thin film technology, J. Cryst. Growth, vol.303, pp.362-380, 2007.

K. Kuwana, T. Li, and K. Saito, Gas-phase reactions during CVD synthesis of carbon nanotubes: Insights via numerical experiments, Chem. Eng. Sci, vol.61, pp.6718-6726, 2006.

H. M. Lee, J. Y. Seo, A. Jung, S. Choi, S. H. Ko et al., Longterm sustainable aluminum precursor solution for highly conductive thin films on rigid and flexible substrates, ACS Appl. Mater. Interf, vol.6, pp.15480-15487, 2014.

R. D. Letterman and D. R. Iyer, Modeling the effects of hydrolyzed aluminum and solution chemistry on flocculation kinetics, Environ. Sci. Technol, vol.19, pp.673-681, 1985.

B. Luo, W. L. Gladfelter, A. , C. , and R. , Chemical vapor deposition of metals, Chemical Vapor Deposition: Precursors, Processes and Applications, p.329, 2009.

K. Masu, M. Yokoyama, H. Matsuhashi, and K. Tsubouchi, Contribution of free electrons to AI CVD on a Si surface by photo-excitation, Appl. Surf. Sci. 79, vol.80, pp.237-243, 1994.

H. Matsuhashi, C. Lee, T. Nishimura, K. Masu, and K. Tsubouchi, Superiority of DMAH to DMEAA for al CVD technology, Mater. Sci. Semicond. Process, vol.2, pp.303-308, 1999.

F. I. Michos, A. P. Sgouros, and M. M. Sigalas, Ab initio study of boron and aluminum hydrides nanoparticles, Int. J. Hydrogen Energy, vol.41, pp.20210-20216, 2016.

T. Nakajima, M. Nakatomi, and K. Yamashita, Quantum chemical calculations on Al-CVD using DMEAA: surface reaction mechanism of AlH 3 on Al(111), Mol. Phys, vol.101, pp.267-276, 2003.

D. W. Robinson and J. W. Rogers, Low temperature atomic layer growth of aluminum nitride on Si(100) using dimethylethylamine alane and 1,1-dimethylhydrazine, Thin Solid Films, vol.372, p.10, 2000.

M. G. Simmonds, I. Taupin, and W. L. Gladfelter, Selective area chemical vapor deposition of aluminum using dimethylethylamine alane, Chem. Mater, vol.6, pp.935-942, 1994.

B. Sundman, I. Ohnuma, N. Dupin, U. R. Kattner, and S. G. Fries, An assessment of the entire Al-Fe system including D0 3 ordering, Acta Mater, vol.57, pp.2896-2908, 2009.

C. M. Tan and A. Roy, Electromigration in ULSI interconnects, Mater. Sci. Eng. R Rep, vol.58, pp.1-75, 2007.

C. Vahlas, Chemical vapor deposition of metals: from unary systems to omplex metallic alloys, Book Series on Complex Metallic Alloys, vol.3, pp.49-81, 2010.

T. C. Xenidou, A. G. Boudouvis, N. C. Markatos, D. Samélor, F. Senocq et al., An experimental and computational analysis of a MOCVD process for the growth of Al films using DMEAA, Surf. Coat. Technol, vol.201, pp.8868-8872, 2007.
URL : https://hal.archives-ouvertes.fr/hal-00806220

T. C. Xenidou, N. Prudhomme, C. Vahlas, N. C. Markatos, and A. G. Boudouvis, Reaction and transport interplay in Al MOCVD investigated through experiments and computational fluid dynamic analysis, J. Electrochem. Soc, vol.157, pp.633-641, 2010.
URL : https://hal.archives-ouvertes.fr/hal-01180142

J. Yun, B. Kim, and S. Rhee, Metal-organic chemical vapor deposition of aluminum from dimethylethylamine alane, Thin Solid Films, vol.312, pp.259-264, 1998.

J. Yun, M. Park, and S. Rhee, Fourier transform infrared diagnostics of gas phase reactions in the metalorganic chemical vapor deposition of aluminum from dimethylethylamine alane, J. Vac. Sci. Technol. A, vol.16, pp.419-423, 1998.